Quantum Dot Infrared Sensors (Q-COMIRSE) for image sensors in consumer market
The purpose of Q-COMIRSE is the development of a new generation of sensors and imagers responsive to short-wave infrared light (SWIR, l between 1100 and 2000nm). Such devices can be used in consumer markets (including smartphones, AR/MR/VR), security, medical imaging, automotive or surveillance and inspection. The research challenge of this project is to develop SWIR photodiodes and imagers using environmentally friendly, printed quantum dot absorbers. The objective is to replace the current high-cost approach based on specialty semiconductor materials which are compliant with prevailing restrictions of hazardous substances such as lead, cadmium and mercury.
Solution-processed InAs QDs are the absorber material of choice in Q-COMIRSE. At the start of the project, no InAs QD photodiode has been demonstrated in literature. Still now, knowledge on large-volume synthesis, processing and chemical and opto-electronic properties of this material is rather scarce.
Q-COMIRSE has 5 concrete objectives:
- Create the scientific know-how on chemical and thermal stability of InAs QDs;
- Establish synthesis protocols for large scale formation of InAs QDs needed to sustain the high volumes of products in consumer markets;
- Develop InAs QDs photodiodes with comparable performance of lead–based QDs and pixel pitch ≤ 5 µm;
- Develop a low-cost printing process of InAs QDs;
- Test the reliability performance of InAs QD photodiodes following JEDEC standard for consumer markets.